.650 nm GalnP/AlGaInP laser diodes with low threshold and compressively strained MQW active layer[J].Optoelectronics Letters,2006,2(4):263-265 650 nm GalnP/AlGaInP laser diodes with low threshold and compressively strained MQW active layer XIA Wei LI Shu-qiang WANG Ling MA De-ying ZHANG Xin WANG Fu-xun JI Gang LIU Ding-wen REN Zhong-xiang XU Xian-gang MEI Liang-mo [1]Shandong University, Ji＇nan 250100, China [2]Shanclong Huaguang Optoelectronics Co. Ltd., Ji＇nan 250101, China Abstract:       650 nm AIGalnP/GalnP laser diodes with compressively strained MQW active layer have been successfully fabricated by means of single epitaxy growth. The threshold current is 6.4 mA,at 40 mA CW operation, the fundamental transverse-mode still remains, and the output power and the slope efficiency can reach 34 mW and 1.1 mW/mA respectively. The dead output power in CW operation can reach 66 mW at a saturation current of 88 mA. During 200 h burn in test,the laser diodes show good stabilization with a degradation of less than 8 %. Hits: 3617 Download times: 161 View Full Text    Download reader