.Deposition of GaN thin film on ZnO/Si by DIBD method[J].Optoelectronics Letters,2006,2(4):282-283 |
Deposition of GaN thin film on ZnO/Si by DIBD method |
LI Geng-wei YANG Shao-yan LIU Zhi-kai ZHENG Zhi-yuan |
[1]School of Materials Science and Technology, China University of Geosciences, Beijing 100083, China [2]Laboratory of semiconductor Materials Science, Chinese Academy of Sciences, Beijing 100083, China |
Abstract: |
The GaN thin film is successfully grown on the sample of ZnO/Si by dual ion beams deposition (DIBD) system. The thin film
GaN/ZnO/Si is characterized by the in-situ X-ray photoelectron spectroscopy (XPS). It is shown that after a thin GaN film
grown on the Zn/Si, the peaks of the Zn and O are not observed. This indicates that the GaN film can be successfully grown
on the ZnO/Si by the dual ion beam deposition (DIBD) system associated with the pulsed laser deposition (PLD) method.
Supported by the National “863” Program (No. 863-715-001-0162) and by the Science and Technology Foundation of China University
of Geosciences (Beijing) (No. 200524). |
Hits: 3839 |
Download times: 207 |
|
View Full Text Download reader |