.Effects of Ar ion assisted deposition on the optical and electrical characteristics of electron-beam-evaporated amorphous Si films[J].Optoelectronics Letters,2006,2(5):358-360 Effects of Ar ion assisted deposition on the optical and electrical characteristics of electron-beam-evaporated amorphous Si films SHU Xiong-wen XU Chen TIAN Zeng-xia LUO Dan SHEN Guang-di Beijing Opto-electronic Technology Laboratory, Beijing University of Technology, Beijing, f00022, China Abstract:       In this paper,the effects of Ar ion bombardment during the electron beam evaporation deposition of the amorphous Si film were investigated. It was found that the bombardment increases the light absorption by two to eleven times and increases the conductance of the film by 3 000 times, This has never been reported before of amorphous Si with electron beam evaporation deposition. Hits: 3689 Download times: 173 View Full Text    Download reader