| .Passive mode locked diode-pumped Nd:GdYVO4 laser with a GaAs absorber[J].Optoelectronics Letters,2008,4(6):422-424 |
| Passive mode locked diode-pumped Nd:GdYVO4 laser with a GaAs absorber |
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| Abstract: |
| A passively Q-switched mode-locked Nd:GdYVO4 laser is successfully demonstrated by using a piece of GaAs crystal grown at low temperature as the passively saturated absorber
and the output coupler. Fundamental properties of the Nd: GdYVO4 laser are investigated. The maximum average output power of 3.5 W is obtained by using plainsphere when the incident pumping
power is 10 W, which corresponds to an optical-optical coversion efficiency of 35%. The threshold power for the Q-switching
mode-locked is 1.2 W. The maximum average output power of 1.72 W is obtained by using GaAs when the incident pumping power
is 10 W, mode-locked pulse train with a repetition rate of ∼113 MHz is achieved. At the incident laser pumping power of 7
W, the modulation depth is 100%. |
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