.Effect of carrier recombination mechanisms on the open circuit voltage of n+-p GaInAsSb thermophotovoltaic cells[J].Optoelectronics Letters,2010,6(1):11-14 Effect of carrier recombination mechanisms on the open circuit voltage of n+-p GaInAsSb thermophotovoltaic cells 彭新村 State;Laboratory;Integrated;Optoelectronics;College;Electronic;Science;Engineering;Jilin;University; Abstract:       By analyzing the main recombination mechanisms in GaInAsSb materials, the dependences of the dark current density and open circuit voltage in n+-p GaInAsSb thermophotovoltaic cells on the recombination parameters, carrier concentration and cell thickness are calculated. The results show that the dark current mainly comes from p-region, and it is related with the surface and Auger recombinations in low and high carrier concentration ranges, respectively. The surface and Auger recombinations can be suppressed... Hits: 3902 Download times: 235 View Full Text    Download reader