.Transient simulation and optimization of InP/InGaAs unitraveling carrier photodetector[J].Optoelectronics Letters,2010,6(3):191-194 Transient simulation and optimization of InP/InGaAs unitraveling carrier photodetector 刘丽飒 Institute;Physics;Nankai;University; Abstract:       The transient photoresponse of a backside-illuminated InP/InGaAs uni-traveling carrier photodetector(UTC-PD) is simulated by a 2D drift-diffusion approach utilizing a commercial numerical device simulator(ATLAS).The effects of the epitaxial layer structure and device biasing are taken into account.The simulation results indicate that the absorption region has a critical effect on the photoresponse pulse,and an optimized epitaxial layer structure is given to achieve a fast response while maintaining a reason... Hits: 4011 Download times: 226 View Full Text    Download reader