LI Jin-tao,CHEN Song-yan,QI Dong-feng,HUANG Wei,LI Cheng,LAI Hong-kai.Energy band design for p-type tensile strained Si/SiGe multi-quantum well infrared photodetector[J].Optoelectronics Letters,2011,7(3):175-177
Energy band design for p-type tensile strained Si/SiGe multi-quantum well infrared photodetector
Author NameAffiliation
LI Jin-tao School of Physics,Mechanical & Electrical Engineering,Xiamen University 
CHEN Song-yan School of Physics,Mechanical & Electrical Engineering,Xiamen University 
QI Dong-feng School of Physics,Mechanical & Electrical Engineering,Xiamen University 
HUANG Wei School of Physics,Mechanical & Electrical Engineering,Xiamen University 
LI Cheng School of Physics,Mechanical & Electrical Engineering,Xiamen University 
LAI Hong-kai School of Physics,Mechanical & Electrical Engineering,Xiamen University 
Abstract:
      The band structure of the confined states is calculated for Si/SiGe multi-quantum well infrared photodetector(M-QWIP).The influence of the Ge component in pseudosubstrate on the energy band structure of Si/Si0.54Ge0.46 multi-quantum wells(MQWs) is investigated.It is found that the high energy levels in the MQWs move up while the low energy levels move down as the Ge component in pseudosubstrate increases.The influence of the barrier width on the energy band structure of MQWs is also studied base...
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