HE Bao-hua,YANG Shi-e,CHEN Yong-sheng,LU Jing-xiao.Simulation of gas phase reactions for microcrystalline silicon films fabricated by PECVD[J].Optoelectronics Letters,2011,7(3):198-201 Simulation of gas phase reactions for microcrystalline silicon films fabricated by PECVD Author Name Affiliation HE Bao-hua  Key Laboratory of Materials Physics,Education Ministry of China,College of Physics and Engineering,Zhengzhou University；  YANG Shi-e  Key Laboratory of Materials Physics,Education Ministry of China,College of Physics and Engineering,Zhengzhou University；  CHEN Yong-sheng  Key Laboratory of Materials Physics,Education Ministry of China,College of Physics and Engineering,Zhengzhou University；  LU Jing-xiao  Key Laboratory of Materials Physics,Education Ministry of China,College of Physics and Engineering,Zhengzhou University；  Abstract:       We present a numerical gas phase reaction model for hydrogenated microcrystalline silicon(μc-Si:H) films from SiH4 and H2 gas mixtures with plasma enhanced chemical vapor deposition(PECVD).Under the typical μc-Si:H deposition conditions,the concentrations of the species in the plasma are calculated and the effects of silane fraction(SF=[SiH4]/[H2+SiH4]) are investigated.The results show that SiH3 is the key precursor for μc-Si:H films growth,and other neutral radicals,such as Si2H5,Si2H4 and SiH... Hits: 4545 Download times: 200 View Full Text    Download reader