ZHAO Hong-dong,SUN Mei,Wang Wei,Ma Lian-xi,LIU Hui-li,LI Wen-chao,LIU Qi.Threshold control in VCSELs by proton implanted depth[J].Optoelectronics Letters,2011,7(4):263-265 Threshold control in VCSELs by proton implanted depth Author Name Affiliation ZHAO Hong-dong  College of Information Engineering,Hebei University of Technology；  SUN Mei  College of Information Engineering,Hebei University of Technology；  Wang Wei  College of Information Engineering,Hebei University of Technology；  Ma Lian-xi  Department of Physics,Blinn College；  LIU Hui-li  College of Information Engineering,Hebei University of Technology；  LI Wen-chao  College of Information Engineering,Hebei University of Technology；  LIU Qi  College of Information Engineering,Hebei University of Technology；  Abstract:       The proton implantation is one of key procedures to confine the current diffusion in vertical cavity surface emitting lasers(VCSELs),in which the proton implanted depth and profile are main parameters.Threshold characteristics of VCSELs with various proton implanted depths are studied after optical,electrical and thermal fields have been simulated self-consistently in three dimensions.It is found that for VCSELs with confinement radius of 2 mm,increasing proton implanted depth can reduce the inj... Hits: 4260 Download times: 197 View Full Text    Download reader