ZHU Yan,NI Hai-qiao,WANG Hai-li,HE Ji-fang,LI Mi-feng,SHANG Xiang-jun,NIU Zhi-chuan.Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy[J].Optoelectronics Letters,2011,7(5):325-329 Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy Author Name Affiliation ZHU Yan  State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences；  NI Hai-qiao  State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences；  WANG Hai-li  State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences；  HE Ji-fang  State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences；  LI Mi-feng  State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences；  SHANG Xiang-jun  State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences；  NIU Zhi-chuan  State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences；  Abstract:       The GaAs based InGaAs metamorphic structures and their growth by molecular beam epitaxy (MBE) are investigated. The controlling of the source temperature is improved to realize the linearly graded InGaAs metamorphic structure precisely. The threading dislocations are reduced. We also optimize the growth and annealing parameters of the InGaAs quantum well (QW). The 1.3-μm GaAs based metamorphic InGaAs QW is completed. A 1.3-μm GaAs based metamorphic laser is reported. 更多还原 Hits: 4092 Download times: 205 View Full Text    Download reader