SONG Peng-fei,QIN Wen-jing,DING Guo-jing,YAN Qi-qi,YANG Li-ying,YIN Shou-gen.An air-stable inverted photovoltaic device using ZnO as the electron selective layer and MoO3 as the blocking layer[J].Optoelectronics Letters,2011,7(5):330-333
An air-stable inverted photovoltaic device using ZnO as the electron selective layer and MoO3 as the blocking layer
Author NameAffiliation
SONG Peng-fei Key Laboratory of Display Materials and Photoelectric Devices, Education Ministry of China, School of Materials Science and Engineering, Tianjin University of Technology Tianjin Key Lab. for Photoelectric Materials and Devices, Tianjin University of Technology 
QIN Wen-jing Key Laboratory of Display Materials and Photoelectric Devices, Education Ministry of China, School of Materials Science and Engineering, Tianjin University of Technology Tianjin Key Lab. for Photoelectric Materials and Devices, Tianjin University of Technology 
DING Guo-jing Key Laboratory of Display Materials and Photoelectric Devices, Education Ministry of China, School of Materials Science and Engineering, Tianjin University of Technology Tianjin Key Lab. for Photoelectric Materials and Devices, Tianjin University of Technology 
YAN Qi-qi Key Laboratory of Display Materials and Photoelectric Devices, Education Ministry of China, School of Materials Science and Engineering, Tianjin University of Technology Tianjin Key Lab. for Photoelectric Materials and Devices, Tianjin University of Technology 
YANG Li-ying Key Laboratory of Display Materials and Photoelectric Devices, Education Ministry of China, School of Materials Science and Engineering, Tianjin University of Technology Tianjin Key Lab. for Photoelectric Materials and Devices, Tianjin University of Technology 
YIN Shou-gen Key Laboratory of Display Materials and Photoelectric Devices, Education Ministry of China, School of Materials Science and Engineering, Tianjin University of Technology Tianjin Key Lab. for Photoelectric Materials and Devices, Tianjin University of Technology 
Abstract:
      An air-stable photovoltaic device based on znic oxide nanoparticles (ZNP) in an inverted structure of indium tin oxide (ITO)/ZnO/poly (3-hexylthiophene) (P3HT): [6,6]-phenyl C61-butyric acid methyl ester (PCBM)/MoO3/Ag is studied. We find that the optimum thickness of the MoO3 layer is 2 nm. When the MoO3 blocking layer is introduced, the fill factor of the devices is increased from 29% to 40%, the power conversion efficiency is directly promoted from 0.35% to 1.27%.The stability under ambient c...
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