Li Cui-ping,Yang Bao-he,Qian Li-rong,Xu Sheng,Dai Wei,Li Ming-ji,Li Xiao-wei,Gao Cheng-yao.Characterization of sputtered ZnO films under different sputter-etching time of substrate[J].Optoelectronics Letters,2011,7(6):431-436 Characterization of sputtered ZnO films under different sputter-etching time of substrate Author Name Affiliation Li Cui-ping  College of Precision Instrument and Optoelectronics Engineering, Tianjin University； Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology；  Yang Bao-he  Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology；  Qian Li-rong  College of Precision Instrument and Optoelectronics Engineering, Tianjin University；  Xu Sheng  College of Precision Instrument and Optoelectronics Engineering, Tianjin University；  Dai Wei  College of Precision Instrument and Optoelectronics Engineering, Tianjin University；  Li Ming-ji  Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology；  Li Xiao-wei  Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology；  Gao Cheng-yao  Chinese Peoples Armed Police Forces Academy；  Abstract:       Polycrystalline ZnO films are prepared using radio frequency magnetron sputtering on glass substrates which are sputter-etched for different time. Both the size of ZnO grains and the root-mean-square (RMS) roughness decrease, as the sputter-etching time of the substrate increases. More Zn atoms are bound to O atoms in the films, and the defect concentration is decreased with increasing sputter-etching time of substrate. Meanwhile, the crystallinity and c-axis orientation are improved at longer s... Hits: 4105 Download times: 226 View Full Text    Download reader