| Chen Xi-ming,Sun Lian-jie,Yang Bao-he,Guo Yan,Wu Xiaoguo.Research on the piezoelectric response of cubic and hexagonal boron nitride films[J].Optoelectronics Letters,2012,8(2):117-120 |
| Research on the piezoelectric response of cubic and hexagonal boron nitride films |
| Author Name | Affiliation | | Chen Xi-ming | Tianjin Key Laboratory of Film Electronic and Communication Device, School of Electronics Information Engineering,
Tianjin University of Technology, Tianjin 300384,China | | Sun Lian-jie | Tianjin Key Laboratory of Film Electronic and Communication Device, School of Electronics Information Engineering,
Tianjin University of Technology, Tianjin 300384,China | | Yang Bao-he | Tianjin Key Laboratory of Film Electronic and Communication Device, School of Electronics Information Engineering,
Tianjin University of Technology, Tianjin 300384,China | | Guo Yan | Tianjin Key Laboratory of Film Electronic and Communication Device, School of Electronics Information Engineering,
Tianjin University of Technology, Tianjin 300384,China | | Wu Xiaoguo | Tianjin Key Laboratory of Film Electronic and Communication Device, School of Electronics Information Engineering,
Tianjin University of Technology, Tianjin 300384,China |
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| Abstract: |
| Boron nitride (BN) films for high-frequency surface acoustic wave (SAW) devices are deposited on Ti/Al/Si(111) wafers by radio
frequency (RF) magnetron sputtering. The structure of BN films is investigated by Fourier transform infrared (FTIR) spectroscopy
and X-ray diffraction (XRD) spectra, and the surface morphology and piezoelectric properties of BN films are characterized
by atomic force microscopy (AFM). The results show that when the flow ratio of nitrogen and argon is 2:18, the cubic BN (c-BN)
film is deposited with high purity and c-axis orientation, and when the flow ratio of nitrogen and argon is 4:20, the hexagonal
BN (h-BN) film is deposited with high c-axis orientation. Both particles are uniform and compact, and the roughnesses are
1.5 nm and 2.29 nm, respectively. The h-BN films have better piezoelectric response and distribution than the c-BN films. |
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| This work has been supported by the National Natural Science Foundation of China (Nos.50972105 and 60806030), and the Tianjin Natural
Science Foundation (Nos. 09JCZDJC16500 and 08JCYBJC14600). |
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