K. A. S. M. Ehteshamul Haque.An Al x In1?x As/GaAs heterojunction ultra-thin film solar cell with 20% efficiency[J].Optoelectronics Letters,2013,9(3):177-180 An Al x In1?x As/GaAs heterojunction ultra-thin film solar cell with 20% efficiency Author Name Affiliation E-mail K. A. S. M. Ehteshamul Haque  Department of Electrical and Electronic Engineering, Islamic University of Technology Board Bazar, Gazipur, 1704, Bangladesh  showmo082422@gmail.com  Abstract:       An ultra-thin film photovoltaic cell, which incorporates an Al x In1?x As/GaAs heterojunction, is simulated using Adept 1D simulation tool, and it is with an energy conversion efficiency of 20.06% (under 1 sun, AM1.5G illumination) for 604 nm cell thickness (excluding the substrate thickness), and optimized layer thickness and doping concentration for each layer of the device. The device has an n-type AlAs window layer (highly doped), an n-type Al x In1?x As emitter layer and a p-type GaAs base layer. Germanium (Ge) substrate is used for the structure. The device parameters are optimized separately for each layer. Based on these optimizations, the ultra-thin film solar cell design is proposed after careful consideration of lattice mismatch between two adjacent layers of the device. Hits: 3722 Download times: 96 View Full Text    Download reader