| Shi-na Li,Rui-xin Ma,Chun-hong Ma,Dong-ran Li,Yu-qin Xiao,Liang-wei He,Hong-min Zhu.Effect of thickness on optoelectrical properties of Nb-doped indium tin oxide thin films deposited by RF magnetron sputtering[J].Optoelectronics Letters,2013,9(3):198-200 |
| Effect of thickness on optoelectrical properties of Nb-doped indium tin oxide thin films deposited by RF magnetron sputtering |
| Author Name | Affiliation | E-mail | | Shi-na Li | Department of Non-ferrous Metallurgy, School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing, Beijing, 100083, China | | | Rui-xin Ma | Department of Non-ferrous Metallurgy, School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing, Beijing, 100083, China | maruixin@ustb.edu.cn | | Chun-hong Ma | Department of Non-ferrous Metallurgy, School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing, Beijing, 100083, China | | | Dong-ran Li | Department of Non-ferrous Metallurgy, School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing, Beijing, 100083, China | | | Yu-qin Xiao | Department of Non-ferrous Metallurgy, School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing, Beijing, 100083, China | | | Liang-wei He | Department of Non-ferrous Metallurgy, School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing, Beijing, 100083, China | | | Hong-min Zhu | Department of Non-ferrous Metallurgy, School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing, Beijing, 100083, China | |
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| Abstract: |
| Niobium-doped indium tin oxide (ITO:Nb) thin films are prepared on glass substrates with various film thicknesses by radio frequency (RF) magnetron sputtering from one piece of ceramic target material. The effects of thickness (60–360 nm) on the structural, electrical and optical properties of ITO: Nb films are investigated by means of X-ray diffraction (XRD), ultraviolet (UV)-visible spectroscopy, and electrical measurements. XRD patterns show the highly oriented (400) direction. The lowest resistivity of the films without any heat treatment is 3.1×10?4Ω·cm?1, and the resistivity decreases with the increase of substrate temperature. The highest Hall mobility and carrier concentration are 17.6 N·S and 1.36×1021 cm?3, respectively. Band gap energy of the films depends on substrate temperature, which varies from 3.48 eV to 3.62 eV. |
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