| Kai-liang Zhang,Chang-qiang Wu,Fang Wang,Yin-ping Miao,Kai Liu,Jin-shi Zhao.Effects of electrodes on resistance switching characteristics of TiO2 for flexible memory[J].Optoelectronics Letters,2013,9(4):263-265 |
| Effects of electrodes on resistance switching characteristics of TiO2 for flexible memory |
| Author Name | Affiliation | E-mail | | Kai-liang Zhang | Tianjin Key Laboratory of Film Electronic and Communication Device, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin, 300384, China | kailiang_zhang@163.com | | Chang-qiang Wu | Tianjin Key Laboratory of Film Electronic and Communication Device, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin, 300384, China | | | Fang Wang | Tianjin Key Laboratory of Film Electronic and Communication Device, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin, 300384, China | | | Yin-ping Miao | Tianjin Key Laboratory of Film Electronic and Communication Device, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin, 300384, China | kikosi@126.com | | Kai Liu | Tianjin Key Laboratory of Film Electronic and Communication Device, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin, 300384, China | | | Jin-shi Zhao | Tianjin Key Laboratory of Film Electronic and Communication Device, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin, 300384, China | |
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| Abstract: |
| Flexible TiO2 memory devices are fabricated on a plastic substrate at room temperature. The metal-insulator-metal (MIM) structure is grown on polyimide (PI). Several metals with different ductilities, such as Al, W, Cu and Ag, are selected as electrode. The test results show that the samples have stable resistive switching behaviors, and the electric characteristics can stay stable even after the radius of substrate is bent up to 10 mm. After 103 times of substrate bending, the memory cells with W as bottom electrode on PI still show stable resistive switching characteristics and low switching voltages. The set voltage and reset voltage can be as low as 0.9 V and 0.3 V, respectively. |
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