| Jia-wei Zhang,Yu-ming Xue,Wei Li,Yan-min Zhao,Zai-xiang Qiao.Morphology of CIGS thin films deposited by single-stage process and three-stage process at low temperature[J].Optoelectronics Letters,2013,9(6):449-453 |
| Morphology of CIGS thin films deposited by single-stage process and three-stage process at low temperature |
| Author Name | Affiliation | E-mail | | Jia-wei Zhang | Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin, 300384, China
National Key Laboratory of Power Sources, Tianjin Institute of Power Sources, Tianjin, 300381, China | | | Yu-ming Xue | Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin, 300384, China | orwell.x@163.com | | Wei Li | National Key Laboratory of Power Sources, Tianjin Institute of Power Sources, Tianjin, 300381, China | wli@nklps.org | | Yan-min Zhao | National Key Laboratory of Power Sources, Tianjin Institute of Power Sources, Tianjin, 300381, China | | | Zai-xiang Qiao | National Key Laboratory of Power Sources, Tianjin Institute of Power Sources, Tianjin, 300381, China | |
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| Abstract: |
| Cu(In,Ga)Se2 (CIGS) thin films are prepared by a single-stage process and a three-stage process at low temperature in the co-evaporation equipment. The quite different morphologies of CIGS thin films deposited by two methods are characterized by scanning electron microscopy (SEM). The orientation of CIGS thin films is identified by X-ray diffraction (XRD) and Raman spectrum, respectively. Through analyzing the film-forming mechanisms of two preparation processes, we consider the cause of such differences is that the films deposited by three-stage process at low temperature evolve from Cu-poor to Cu-rich ones and then back to Cu-poor ones. The three-stage process at low temperature results in the CIGS thin films with the (220)/(204) preferred orientation, and the ordered vacancy compound (OVC) layer is formed on the surface of the film. This study has great significance to large-scale industrial production. |
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| This work has been supported by the National High Technology Research and Development Program of China （No.2012AA050701）. |
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