Li-ping Dai,Shu-ya Wang,Zhi-qin Zhong,Guo-jun Zhang.Properties of p-type ZnO thin films with different orientations[J].Optoelectronics Letters,2014,10(2):111-114 Properties of p-type ZnO thin films with different orientations Author Name Affiliation E-mail Li-ping Dai  State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China  dlp@uestc.edu.cn  Shu-ya Wang  State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China    Zhi-qin Zhong  State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China    Guo-jun Zhang  State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China    Abstract:       The stable properties of N-doped p-type ZnO thin films with preferential nonpolar (100) plane orientation relative to polar (002) plane orientation are investigated. The two kinds of oriented thin films are fabricated by the methods of post heat treatment and double sources in situ, respectively. The Hall investigations demonstrate that N-doped p-type ZnO thin films with preferential nonpolar (100) plane orientation are more stable,and the results are also proved by build-in electric field model and electronic structure calculations of the films based on the first principle. Hits: 3977 Download times: 0 This work has been supported by the National Natural Science Foundation of China （No.61204088） and the Fundamental Research Funds for the Central Universities （No.ZYGX2011 J029）. View Full Text    Download reader