Gui-chu Chen,Guang-han Fan.Effect of n-type barrier doping on steady and dynamic performance of InGaN light-emitting diodes[J].Optoelectronics Letters,2014,10(4):250-252 Effect of n-type barrier doping on steady and dynamic performance of InGaN light-emitting diodes Author Name Affiliation E-mail Gui-chu Chen  Department of Electronic Information, Zhao Qing University, Zhaoqing, 526061, China Institute of Optoelectronic Material and Technology, South China Normal University, Guangzhou, 510631, China  gchenbox@126.com  Guang-han Fan  Institute of Optoelectronic Material and Technology, South China Normal University, Guangzhou, 510631, China    Abstract:       The steady and dynamic properties are comparatively investigated for the n-doped and non-doped InGaN LEDs. The simulated results show that the n-doped LED exhibits the superior luminescence and modulation performance, which is mainly attributed to the higher carrier radiative rate of n-doped LED. The results can explain the reported experimental results perfectly. Hits: 3683 Download times: 0 This work has been supported by the National Natural Science Foundation of China （No.61176043）. View Full Text    Download reader