GAO Yu-zhu,GONG Xiu-ying,ZHOU Ran,LI Ji-jun,FENG Yan-bin,Takamitsu Makino,Hirofumi Kan.Uncooled InAs0.09Sb0.91 photoconductors with cutoff wave- length extended to 11.5 μm[J].Optoelectronics Letters,2015,11(5):352-355 Uncooled InAs0.09Sb0.91 photoconductors with cutoff wave- length extended to 11.5 μm Author Name Affiliation GAO Yu-zhu  College of Electronics and Information Engineering, Tongji University, Shanghai 201804, China  GONG Xiu-ying  College of Electronics and Information Engineering, Tongji University, Shanghai 201804, China  ZHOU Ran  College of Electronics and Information Engineering, Tongji University, Shanghai 201804, China  LI Ji-jun  Huaxing Infrared Device Company, Xi’an 712099, China  FENG Yan-bin  Huaxing Infrared Device Company, Xi’an 712099, China  Takamitsu Makino  Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamakita 434-8601, Japan  Hirofumi Kan  Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamakita 434-8601, Japan  Abstract:       Uncooled InAsSb photoconductors were fabricated. The photoconductors were based on InAs0.05Sb0.95 and InAs0.09Sb0.91 thick epilayers grown on InAs substrates by melt epitaxy (ME). Ge immersion lenses were set on the photoconductors. The cutoff wavelength of InAs0.09Sb0.91 detectors is obviously extended to 11.5 mm, and that of InAs0.05Sb0.95 detectors is 8.3 mm. At room temperature, the peak detectivity of Dλp at wavelength of 6.8 mm and modulation frequency of 1 200 Hz is 1.08×109 cm.Hz1/2.W-1 for InAs0.09Sb0.91 photoconductors, the detectivity D at wavelength of 9 mm is 7.56×108 cm.Hz1/2.W-1, and that at 11 mm is 3.92×108 cm.Hz1/2.W-1. The detectivity of InAs0.09Sb0.91 detectors at the wavelengths longer than 9 mm is about one order of magnitude higher than that of InAs0.05Sb0.95 detectors, which rises from the increase of arsenic (As) composition in InAs0.09Sb0.91 materials. Hits: 3848 Download times: 0 This work has been supported by the Fundamental Research Funds for the Central Universities in China. View Full Text    Download reader