| LU Zhou,LONG Lu,ZHONG Zhi-you,HOU Jin,YANG Chun-yong,GU Jin-hua,LONG Hao.Fabrication and characterization of transparent conducting titanium-zinc oxide nanostructured thin films[J].Optoelectronics Letters,2016,12(2):128-131 |
| Fabrication and characterization of transparent conducting titanium-zinc oxide nanostructured thin films |
| Author Name | Affiliation | | LU Zhou | College of Electronic Information Engineering, South-Central University for Nationalities, Wuhan 430074, China | | LONG Lu | College of Electronic Information Engineering, South-Central University for Nationalities, Wuhan 430074, China | | ZHONG Zhi-you | College of Electronic Information Engineering, South-Central University for Nationalities, Wuhan 430074, China
Hubei Key Laboratory of Intelligent Wireless Communications, South-Central University for Nationalities, Wuhan 430074, China | | HOU Jin | College of Electronic Information Engineering, South-Central University for Nationalities, Wuhan 430074, China
Hubei Key Laboratory of Intelligent Wireless Communications, South-Central University for Nationalities, Wuhan 430074, China | | YANG Chun-yong | College of Electronic Information Engineering, South-Central University for Nationalities, Wuhan 430074, China
Hubei Key Laboratory of Intelligent Wireless Communications, South-Central University for Nationalities, Wuhan 430074, China | | GU Jin-hua | Center of Experiment Teaching, South-Central University for Nationalities, Wuhan 430074, China | | LONG Hao | College of Electronic Information Engineering, South-Central University for Nationalities, Wuhan 430074, China |
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| Abstract: |
| Nano transparent conducting titanium-zinc oxide (Ti-ZnO) thin films were prepared on glass substrates by radio frequency (RF) magnetron sputtering technique. The deposited films are characterized by X-ray diffraction (XRD), four-probe meter and UV-visible spectrophotometer. The effects of Ti-doping content on the structural, optical and electrical properties of the films are investigated. The XRD results show that the obtained films are polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. The structural and optoelectronic characteristics of the deposited films are subjected to the Ti-doping content. The Ti-ZnO sample fabricated with the Ti-doping content of 3% (weight percentage) possesses the best crystallinity and optoelectronic performance, with the highest degree of preferred (002) orientation of 99.87%, the largest crystallite size of 83.2 nm, the minimum lattice strain of 6.263?10-4, the highest average visible transmittance of 88.8%, the lowest resistivity of 1.18×10-3 W?cm and the maximum figure of merit (FOM) of 7.08×103 W-1?cm-1. Furthermore, the optical bandgaps of the films are evaluated by extrapolation method and observed to be an increasing tendency with the increase of the Ti-doping content. |
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