ZHANG Shao-qian,Petre Němec,Virginie Nazabal,JIN Yu-qi.Photonic bandgap amorphous chalcogenide thin films with multilayered structure grown by pulsed laser deposition method[J].Optoelectronics Letters,2016,12(3):199-202 Photonic bandgap amorphous chalcogenide thin films with multilayered structure grown by pulsed laser deposition method Author Name Affiliation ZHANG Shao-qian  Key Laboratory of Chemical Laser, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China Institut des Sciences Chimiques de Rennes,?quipe Verres et Céramiques, Université de Rennes, Rennes 35042, France  Petre Němec  Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Pardubice 53210, Czech Republic  Virginie Nazabal  Institut des Sciences Chimiques de Rennes,?quipe Verres et Céramiques, Université de Rennes, Rennes 35042, France  JIN Yu-qi  Key Laboratory of Chemical Laser, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China  Abstract:       Amorphous chalcogenide thin films were fabricated by the pulsed laser deposition technique. Thereafter, the stacks of multilayered thin films for reflectors and microcavity were designed for telecommunication wavelength. The prepared multilayered thin films for reflectors show good compatibility. The microcavity structure consists of Ge25Ga5Sb10S65 (doped with Er3+) spacer layer surrounded by two 5-layer As40Se60/Ge25Sb5S70 reflectors. Scanning/transmission electron microscopy results show good periodicity, great adherence and smooth interfaces between the alternating dielectric layers, which confirms a suitable compatibility between different materials. The results demonstrate that the chalcogenides can be used for preparing vertical Bragg reflectors and microcavity with high quality. Hits: 4195 Download times: 0 View Full Text    Download reader