| LI Dong-ling,FENG Xiao-fei,WEN Zhi-yu,SHANG Zheng-guo,SHE Yin.Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition[J].Optoelectronics Letters,2016,12(4):285-289 |
| Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition |
| Author Name | Affiliation | | LI Dong-ling | National Key Laboratory of Fundamental Science of Novel Micro/Nano Device and System Technology, Chongqing University, Chongqing 400030, China
Key Laboratory of Optoelectronic Technology and System of the Education Ministry of China, Chongqing University, Chongqing 400030, China | | FENG Xiao-fei | No.24 Reaearch Institute of China Electronics Technology Group Corporation, Chongqing 400060, China | | WEN Zhi-yu | National Key Laboratory of Fundamental Science of Novel Micro/Nano Device and System Technology, Chongqing University, Chongqing 400030, China
Key Laboratory of Optoelectronic Technology and System of the Education Ministry of China, Chongqing University, Chongqing 400030, China | | SHANG Zheng-guo | National Key Laboratory of Fundamental Science of Novel Micro/Nano Device and System Technology, Chongqing University, Chongqing 400030, China
Key Laboratory of Optoelectronic Technology and System of the Education Ministry of China, Chongqing University, Chongqing 400030, China | | SHE Yin | National Key Laboratory of Fundamental Science of Novel Micro/Nano Device and System Technology, Chongqing University, Chongqing 400030, China
Key Laboratory of Optoelectronic Technology and System of the Education Ministry of China, Chongqing University, Chongqing 400030, China |
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| Abstract: |
| Stress controllable silicon nitride (SiNx) films deposited by plasma enhanced chemical vapor deposition (PECVD) are reported. Low stress SiNx films were deposited in both high frequency (HF) mode and dual frequency (HF/LF) mode. By optimizing process parameters, stress free (?0.27 MPa) SiNx films were obtained with the deposition rate of 45.5 nm/min and the refractive index of 2.06. Furthermore, at HF/LF mode, the stress is significantly influenced by LF ratio and LF power, and can be controlled to be 10 MPa with the LF ratio of 17% and LF power of 150 W. However, LF power has a little effect on the deposition rate due to the interaction between HF power and LF power. The deposited SiNx films have good mechanical and optical properties, low deposition temperature and controllable stress, and can be widely used in integrated circuit (IC), micro-electro-mechanical systems (MEMS) and bio-MEMS. |
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