| SHEN Gao,LI Zuo-han,HAN Ming.Fabrication of narrow pulse passively Q-switched self- stimulated Raman laser with c-cut Nd:GdVO4[J].Optoelectronics Letters,2016,12(6):430-432 |
| Fabrication of narrow pulse passively Q-switched self- stimulated Raman laser with c-cut Nd:GdVO4 |
| Author Name | Affiliation | | SHEN Gao | Center for Medical Device Evaluation, China Food and Drug Administration, Beijing 100044, China | | LI Zuo-han | Key Laboratory of Luminescence and Optical Information of Ministry of Education, Institute of Laser, School of Science, Beijing Jiaotong University, Beijing 100044, China | | HAN Ming | Key Laboratory of Luminescence and Optical Information of Ministry of Education, Institute of Laser, School of Science, Beijing Jiaotong University, Beijing 100044, China |
|
| Abstract: |
| Combining the self-stimulated Raman scattering technology and saturable absorber of Cr4+:YAG, a 1.17 μm c-cut Nd:GdVO4 picosecond Q-switched laser is demonstrated in this paper. With an incident pump power of 10 W, the Q-switched laser with average power of 430 mW for 1.17 μm, pulse width of 270 ps, repetition rate of 13 kHz and the first order Stokes conversion efficiency of 4.3% is obtained. The Q-switched pulse width can be the narrowest in our research. In addition, the yellow laser at 0.58 μm is also achieved by using the LiB3O5 frequency doubling crystal. |
| Hits: 3791 |
| Download times: 0 |
|
| View Full Text Download reader |
|
|
|
