| LI Peng-yu,XUE Yu-ming,LIU Hao,XIA Dan,SONG Dian-you,FENG Shao-jun,SUN Hai-tao,YU Bing-bing,QIAO Zai-xiang.Research on structure of Cu2ZnSn(S, Se)4 thin films with high Sn-related phases[J].Optoelectronics Letters,2016,12(6):446-449 |
| Research on structure of Cu2ZnSn(S, Se)4 thin films with high Sn-related phases |
| Author Name | Affiliation | | LI Peng-yu | Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384, China | | XUE Yu-ming | Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384, China | | LIU Hao | Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384, China
Tianjin Institute of Power Sources, Tianjin 300384, China | | XIA Dan | Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384, China | | SONG Dian-you | Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384, China | | FENG Shao-jun | Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384, China | | SUN Hai-tao | Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384, China | | YU Bing-bing | Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384, China
Tianjin Institute of Power Sources, Tianjin 300384, China | | QIAO Zai-xiang | Tianjin Institute of Power Sources, Tianjin 300384, China |
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| Abstract: |
| Cu2ZnSn(S, Se)4 (CZTSSe) thin films were deposited on flexible substrates by three evaporation processes at high temperature. The chemical compositions, microstructures and crystal phases of the CZTSSe thin films were respectively characterized by inductively coupled plasma optical emission spectrometer (ICP-OES), scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman scattering spectrum. The results show that the single-step evaporation method at high temperature yields CZTSSe thin films with nearly pure phase and high Sn-related phases. The elemental ratios of Cu/(Zn+Sn)=1.00 and Zn/Sn=1.03 are close to the characteristics of stoichiometric CZTSSe. There is the smooth and uniform crystalline at the surface and large grain size at the cross section for the films, and no other phases exist in the film by XRD and Raman shift measurement. The films are no more with the Sn-related phase deficiency. |
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