| SUN Jian-xu,MI Wei,ZHANG De-shuang,YANG Zheng-chun,ZHANG Kai-liang,HAN Ye-mei,YUAN Yu-jie,ZHAO Jin-shi,LI Bo.Synthesis of monoclinic structure gallium oxide film on sapphire substrate by magnetron sputtering[J].Optoelectronics Letters,2017,13(4):295-298 |
| Synthesis of monoclinic structure gallium oxide film on sapphire substrate by magnetron sputtering |
| Author Name | Affiliation | | SUN Jian-xu | Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384, China | | MI Wei | Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384, China | | ZHANG De-shuang | Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384, China | | YANG Zheng-chun | Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384, China | | ZHANG Kai-liang | Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384, China | | HAN Ye-mei | Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384, China | | YUAN Yu-jie | Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384, China | | ZHAO Jin-shi | Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384, China | | LI Bo | Research and Development Center of Silicon Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| Abstract: |
| Gallium oxide (Ga2O3) films were deposited on singlecrystalline sapphire (0001) substrate by radio frequency (RF) magnetron sputtering technique in the temperature range of 300—500 °C. The microstructure of the β-Ga2O3 films were investigated in detail using X-ray diffractometer (XRD) and scanning electron microscope (SEM). The results show that the film prepared at 500 °C exhibits the best crystallinity with a monoclinic structure (β-Ga2O3). Structure analysis reveals a clear out-of-plane orientation of β-Ga2O3 || Al2O3 (0001). The average transmittance of these films in the visible wavelength range exceeds 90%, and the optical band gap of the films varies from 4.68 eV to 4.94 eV which were measured by an ultraviolet-visible-near infrared (UV-vis-NIR) spectrophotometer. Therefore, it is hopeful that the β-Ga2O3 film can be used in the UV optoelectronic devices. #$TABThis work has been supported by the National Natural Science Foundation of China (Nos.61274113, 61404091, 61505144, 51502203 and 51502204), the Opening Fund of Key Laboratory of Silicon Device Technology in Chinese Academy of Sciences, and the Tianjin Natural Science Foundation (Nos.14JCZDJC31500 and 14JCQNJC00800).#$TABE-mail:miwei1986@yeah.net |
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