| LIN Hong-liang,ZENG Xiang-hua,SHI Shi-man,TIAN Hai-jun,YANG Mo,CHU Kai-ming,YANG Kai,LI Quan-su.Optimization of GaAs-based 940 nm infrared light emitting diode with dual-junction design[J].Optoelectronics Letters,2019,15(2):113-116 |
| Optimization of GaAs-based 940 nm infrared light emitting diode with dual-junction design |
| Author Name | Affiliation | | LIN Hong-liang | College of Physics Science and Technology & Institute of Optoelectronic Technology, Yangzhou University, Yangzhou 225002, China
Yangzhou Change Light Optoelectronic Co., Ltd., Yangzhou 225009, China | | ZENG Xiang-hua | College of Physics Science and Technology & Institute of Optoelectronic Technology, Yangzhou University, Yangzhou 225002, China | | SHI Shi-man | Yangzhou Change Light Optoelectronic Co., Ltd., Yangzhou 225009, China | | TIAN Hai-jun | Yangzhou Change Light Optoelectronic Co., Ltd., Yangzhou 225009, China | | YANG Mo | Yangzhou Change Light Optoelectronic Co., Ltd., Yangzhou 225009, China | | CHU Kai-ming | Yangzhou Change Light Optoelectronic Co., Ltd., Yangzhou 225009, China | | YANG Kai | Yangzhou Change Light Optoelectronic Co., Ltd., Yangzhou 225009, China | | LI Quan-su | Yangzhou Change Light Optoelectronic Co., Ltd., Yangzhou 225009, China |
|
| Abstract: |
| Epitaxial growths of the GaAs/AlGaAs-based 940 nm infrared light emitting diodes (LEDs) with dual junctions were carried out by using metalorganic chemical vapor deposition (MOCVD) with different doping concentrations and Al contents in AlxGa1-xAs compound. And their optoelectric properties show that the optimal design for tunneling region corresponds to P++ layer with hole concentration up to 1×1020 cm-3, N++ layer electron concentration up to 5×1019 cm-3 and constituent Al0.2Ga0.8As in the tunneling junction region. The optimized dual-junction LED has a forward bias of 2.93 V at an injection current of 50 mA, and its output power is 24.5 mW, which is 104% larger than that of the single junction (12 mW). Furthermore, the optimized device keeps the same spectral characteristics without introducing excessive voltage droop. |
| Hits: 47419 |
| Download times: 0 |
|
| View Full Text Download reader |
|
|
|
