| CHEN Ai,WANG Zhen,XIE Jia-feng,WANG Pei.Tandem organic light-emitting diodes with buffer- modified C60/ZnPc as charge generation layer[J].Optoelectronics Letters,2019,15(3):185-189 |
| Tandem organic light-emitting diodes with buffer- modified C60/ZnPc as charge generation layer |
| Author Name | Affiliation | | CHEN Ai | School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China | | WANG Zhen | School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China | | XIE Jia-feng | School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China | | WANG Pei | School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China |
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| Abstract: |
| In this paper, a significant enhancement in current efficiency of the green tandem organic light-emitting diodes (TOLEDs) is demonstrated, which is based on a buffer-modified charge generation layer (CGL) of fullerene carbon (C60)/zinc-phthalocyanine (ZnPc). Al and MoO3 were used as the buffer-modified layers on both sides of the bilayer C60/ZnPc, respectively. Experimental results show that the inserted Al and MoO3 layers can effectively increase the electron extraction of the CGL for obtaining the device performance enhancement. Compared with that of the green TOLEDs without buffer-modified layers in CGL (37.3 cd?A-1), the current efficiency of the green TOLEDs is increased to 54.1 cd?A-1. Further study results find that the performance can also be improved by optimizing the thickness of Al in the CGL. The maximum current efficiency and maximum luminance of the green TOLEDs achieve 63.5 cd?A-1 and 17 873 cd?m-2, respectively, when the multilayer structure of the CGL is Al (3 nm)/C60 (5 nm)/ZnPc (5 nm)/MoO3 (3 nm). |
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