| CUI Bi-feng,WANG Yang,FANG Tian-xiao,HAO Shuai,CHENG Jin,LI Cai-fang.Study on electronic blocking layer of 403 nm GaN-based vertical cavity surface emitting lasers[J].Optoelectronics Letters,2019,15(6):411-414 |
| Study on electronic blocking layer of 403 nm GaN-based vertical cavity surface emitting lasers |
| Author Name | Affiliation | | CUI Bi-feng | Key Laboratory of Opto-Electronics Technology, Ministry of Education, Faculty of Information Technology，Beijing University of Technology, Beijing 100124, China | | WANG Yang | Key Laboratory of Opto-Electronics Technology, Ministry of Education, Faculty of Information Technology，Beijing University of Technology, Beijing 100124, China | | FANG Tian-xiao | Key Laboratory of Opto-Electronics Technology, Ministry of Education, Faculty of Information Technology，Beijing University of Technology, Beijing 100124, China | | HAO Shuai | Key Laboratory of Opto-Electronics Technology, Ministry of Education, Faculty of Information Technology，Beijing University of Technology, Beijing 100124, China | | CHENG Jin | Key Laboratory of Opto-Electronics Technology, Ministry of Education, Faculty of Information Technology，Beijing University of Technology, Beijing 100124, China | | LI Cai-fang | Key Laboratory of Opto-Electronics Technology, Ministry of Education, Faculty of Information Technology，Beijing University of Technology, Beijing 100124, China |
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| Abstract: |
| In order to obtain good optical characteristics in the GaN-based vertical-cavity surface-emitting laser (VCSEL), different kinds of AlGaN electron blocking layers (EBL) were introduced. These were inserted coherently near the active region to limit electron leakage into the p-doped side. The research was conducted by photonic integrated circuit simulator in three-dimensional (PICS3D). The simulated results reveal that an EBL can improve the optical characteristics of a VCSEL effectively. All the advantages are due to a reduction in the electron leakage in the quantum wells. While the voltage of the five-layer EBLs LD is lower than the voltage of the seven-layer EBLs LD, the output power of the two is approximately the same, so the five-layer EBLs is the best choice for comprehensive structure analysis as the epitaxial structure can be grown more easily on it. |
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