| SHI Si-han,FAN Yu,HE Zhi-chao,ZHOU Zhi-qiang,LIU Fang-fang,ZHANG Yi,TANG An-dong,SUN Yun,LIU Wei.Study#$TABon#$TABsputtering#$TABZn(O,S)#$TABbuffer#$TABlayers for eco-friendly Cu(In,Ga)Se2 solar cells[J].Optoelectronics Letters,2019,15(6):435-438 |
| Study#$TABon#$TABsputtering#$TABZn(O,S)#$TABbuffer#$TABlayers for eco-friendly Cu(In,Ga)Se2 solar cells |
| Author Name | Affiliation | | SHI Si-han | Tianjin Key Laboratory of Thin Film Devices and Technology, Institute of Photoelectronic Thin Film Devices and Technology and Nankai University, Tianjin 300350, China | | FAN Yu | Tianjin Key Laboratory of Thin Film Devices and Technology, Institute of Photoelectronic Thin Film Devices and Technology and Nankai University, Tianjin 300350, China | | HE Zhi-chao | Tianjin Key Laboratory of Thin Film Devices and Technology, Institute of Photoelectronic Thin Film Devices and Technology and Nankai University, Tianjin 300350, China | | ZHOU Zhi-qiang | Tianjin Key Laboratory of Thin Film Devices and Technology, Institute of Photoelectronic Thin Film Devices and Technology and Nankai University, Tianjin 300350, China | | LIU Fang-fang | Tianjin Key Laboratory of Thin Film Devices and Technology, Institute of Photoelectronic Thin Film Devices and Technology and Nankai University, Tianjin 300350, China | | ZHANG Yi | Tianjin Key Laboratory of Thin Film Devices and Technology, Institute of Photoelectronic Thin Film Devices and Technology and Nankai University, Tianjin 300350, China | | TANG An-dong | Hanergy Heyuan Mobile Energy Intelligence Manufacture Base, Beijing 100031, China | | SUN Yun | Tianjin Key Laboratory of Thin Film Devices and Technology, Institute of Photoelectronic Thin Film Devices and Technology and Nankai University, Tianjin 300350, China | | LIU Wei | Tianjin Key Laboratory of Thin Film Devices and Technology, Institute of Photoelectronic Thin Film Devices and Technology and Nankai University, Tianjin 300350, China |
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| Abstract: |
| An eco-friendly Zn(O,S) film with a wider band gap is emerging as one of the promising Cd-free replacement material, which can be deposited by radio frequency sputtering. The effect of sputtering pressure on the Zn(O,S) films properties and the devices performance are studied systematically. At high pressure, the ZnS phase is found in the Zn(O,S) films resulting in a higher barrier at Zn(O,S) /CIGS interface which would lead to a low recombination activation energy (Ea). By reducing sputtering pressure, single phase of Zn(O,S) films are conducive to carrier transport as well as pro- mote the films electric properties, ultimately improving the performance of Zn(O,S)/CIGS solar cells. This work has been supported by the National Natural Science Foundation of China (Nos.61774089, 51572132 and 61504067), and the Yang Fan Innovative & Entrepreneurial Research Team Project (No.2014YT02N037). E-mail:wwl@nankai.edu.cn |
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