LI Bo-yan,LIU Fang-fang,andLIN Lie.Sn doped ZnO thin films as high resistivity window layer for Cu(In,Ga)Se2 solar cells[J].Optoelectronics Letters,2020,16(6):451-454 Sn doped ZnO thin films as high resistivity window layer for Cu(In,Ga)Se2 solar cells Author Name Affiliation LI Bo-yan  Institute of Modern Optics, College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China  LIU Fang-fang  Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin Nankai University, Tianjin 300350, China Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Tianjin 300350, China  andLIN Lie  Institute of Modern Optics, College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China  Abstract:       For high efficiency Cu(In,Ga)Se2 (CIGS) solar cell, the high-resistivity layer with high optical transmittance has to be adopted between the buffer layer and the high-conductivity window layer. In this paper, we propose Sn doped ZnO (ZTO) film, instead of the traditional intrinsic ZnO (i-ZnO) film, as an alternative n-type high-resistivity window layer for CIGS solar cell. In this experiment, both ZTO and i-ZnO films are strong (002) oriented, and the surface morphologies of the two films are almost the same. The statistical roughnesses of i-ZnO film and ZTO film are 0.58 nm and 0.63 nm, respectively. However, the optical transmittance of ZTO film is higher than that of i-ZnO film with the same thickness. The efficiency of ZTO based CIGS cell was 14.24%, which is almost the same as the efficiency of i-ZnO based CIGS cell. These results fully suggest that it is very feasible to replace i-ZnO with ZTO as the high resistant window layer. Hits: 821 Download times: 0 View Full Text    Download reader