| ZHANG Meng,ZHANG Fanghui,SHI Kewang,ZHANG Wenxi,HUANG Jin,QIU Huimin.Polymer passivation of defects in inorganic perovskite solar cells[J].Optoelectronics Letters,2022,(6):338-342 |
| Polymer passivation of defects in inorganic perovskite solar cells |
| Author Name | Affiliation | | ZHANG Meng | School of Electrical and Control Engineering, Shaanxi University of Science & Technology, Xi’an 710021,China | | ZHANG Fanghui | School of Electronic Information and Artificial Intelligence, Shaanxi University of Science and Technology, Xi’an 710021, China | | SHI Kewang | School of Electronic Information and Artificial Intelligence, Shaanxi University of Science and Technology, Xi’an 710021, China | | ZHANG Wenxi | School of Electrical and Control Engineering, Shaanxi University of Science & Technology, Xi’an 710021,China | | HUANG Jin | School of Electronic Information and Artificial Intelligence, Shaanxi University of Science and Technology, Xi’an 710021, China | | QIU Huimin | School of Electrical and Control Engineering, Shaanxi University of Science & Technology, Xi’an 710021,China |
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| Abstract: |
| Inorganic perovskite solar cells (IPSCs) have attained attention due to their excellent thermal and phase stability. In this work, we demonstrate a novel approach for fabricating IPSCs, using the strategies of interface passivation and anti-solvent before spin-coating perovskite. Poly(methyl methacrylate) (PMMA) and chlorobenzene (CB) are used as passivator and anti-solvent, respectively. The CB improves the perovskite crystal morphology. Meanwhile, PMMA passivates the defects between poly(3, 4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) and perovskite layer, thus increasing the short-circuit current. Excitingly, we find that PMMA benefits the grain boundaries (GBs) of perovskite, which makes it more humidity-resistant, increasing the stability of perovskite film. Especially, PMMA mitigates interfacial charge losses, and the devices based on CsPbI3-xBrx passivated by PMMA exhibit the power conversion efficiency (PCE) much higher than those based on pure CsPbI3-xBrx. |
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