TAN Zhiyuan,XUE Yuming,DAI Hongli,WANG Luoxin,HU Xiaofeng,BAI Xin.Tuning the band gap of the CIGS solar buffer layer Cd1-xZnxS (x=0—1) to achieve high efficiency[J].Optoelectronics Letters,2024,(2):100-106
Tuning the band gap of the CIGS solar buffer layer Cd1-xZnxS (x=0—1) to achieve high efficiency
Author NameAffiliation
TAN Zhiyuan Institute of New Energy Intelligence Equipment, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China 
XUE Yuming Institute of New Energy Intelligence Equipment, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China 
DAI Hongli Institute of New Energy Intelligence Equipment, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China 
WANG Luoxin Institute of New Energy Intelligence Equipment, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China 
HU Xiaofeng Institute of New Energy Intelligence Equipment, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China 
BAI Xin Institute of New Energy Intelligence Equipment, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China 
Abstract:
      To evaluate the impact of zinc sulfate (ZnSO4) concentration on the structural properties of the films, Cd1-xZnxS thin films were formed on glass substrates using chemical bath deposition (CBD) in this study. The effect of ZnSO4 precursor concentration on the surface morphology, optical properties, and morphological structure of the Cd1-xZnxS films was investigated. To study the impact of zinc doping content on the performance metrics of Cu(In1-xGax)Se2 (CIGS) cells in the experimental group and to improve the buffer layer thickness, simulations were run using one-dimensional solar cell capacitance simulator (SCAPS-1D) software.
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