LING Xiang,ZHU Pengfei,ZHU Kun,SONG Pei,LI Xiong.Lateral photovoltaic effect in the Ni-SiO2-Si structure with bias[J].Optoelectronics Letters,2024,20(5):257-264 Lateral photovoltaic effect in the Ni-SiO2-Si structure with bias Author Name Affiliation LING Xiang  School of Mathematics, Physics and Statistics, Shanghai University of Engineering Science, Shanghai 201600, China  ZHU Pengfei  School of Mathematics, Physics and Statistics, Shanghai University of Engineering Science, Shanghai 201600, China School of Electrical Engineering, Liupanshui Normal University, Liupanshui 553004, China  ZHU Kun  School of Electrical Engineering, Liupanshui Normal University, Liupanshui 553004, China  SONG Pei  School of Mathematics, Physics and Statistics, Shanghai University of Engineering Science, Shanghai 201600, China  LI Xiong  School of Railway Telecommunication, Hunan Technical College of Railway High-speed, Hengyang 421002, China  Abstract:       We designed a clamping device to study lateral photovoltaic effect (LPE) in Ni-SiO2-Si structure with bias due to the appropriate barrier height. The LPE has a prominent sensitivity and linearity with 532 nm wavelength laser. The transient response time is 450 μs and the relaxation time is 2 250 μs in the Ni-SiO2-Si structure without bias. The LPE sensitivity has a significant improvement with bias. The transient response time is 6 μs and the relaxion time is 47 μs with ?7 V bias, not only improving the LPE sensitivity, but also increasing the response speed with bias. The research shows that the Schottky barrier structure can improve the sensitivity and linearity of LPE with bias effectively, and thus it can be used in position sensitive sensors. Hits: 0 Download times: 0 View Full Text    Download reader