.Temperature dependence of excitonic transition in ZnSe/ZnCdSe quantum wells[J].Optoelectronics Letters,2005,1(3):164-167 Temperature dependence of excitonic transition in ZnSe/ZnCdSe quantum wells GUO Zi-zheng LIANG Xi-xia BAN Shi-liang [1]Department of Physics, Inner Mongolia University, Hohhot 010021, P. R. China [2]Department of Physics, Inner Mongolia Normal University, Hohhot 010022, P. R. Chine Abstract:       A theoretical calculation for the temperature dependence of the excitonic transition in ZnSe/ZnOdSe quantum wells is performed. The exciton binding energy is calculated with a variational technique by considering the temperature-dependence parameters. Our results show that the exciton binding energy reduces linearly with temperature increasing. We find that the strain due to lattice mismatch and differential thermal expansion decreases with the temperature increasing. Hits: 3486 Download times: 185 View Full Text    Download reader