.650 nm GaInP/AlGaInP laser diodes with low threshold and compressively strained MQW active layer[J].Optoelectronics Letters,2006,2(4): 650 nm GaInP/AlGaInP laser diodes with low threshold and compressively strained MQW active layer Abstract:        Hits: 3528 Download times: 149 View Full Text    Download reader