.Effects of growth interruption on the properties of InGaN/GaN MQWs grown by MOCVD[J].Optoelectronics Letters,2007,3(1):1-3 Effects of growth interruption on the properties of InGaN/GaN MQWs grown by MOCVD NIU Nan-hui WANG Huai-bing LIU Jian-ping LIU Nai-xin XING Yan-hui HAN Jun DENG Jun SHEN Guang-di Institute of Information, Beijing Optoelectronic Technology Laboratory, Beijing University of Technology Beijing 100022, China Abstract:       InGaN/GaN MQWs structures were grown by MOCVD. The effects of the growth interruption time on the optical and structural properties of InGaN/GaN MQWs were investigated. The experimental results show that the growth interruption can improve the interface quality,increase the intensity of photoluminescence (PL) and electroluminescence (EL); but if the interruption time was too long,the well thickness and the average In composition of MQWs decreased,and the EL intensity also decreased due to poor interface quality and impurities derived from growth interruption. Hits: 3615 Download times: 205 View Full Text    Download reader