.Design of tunneling injection quantum dot lasers[J].Optoelectronics Letters,2007,3(1):4-6 Design of tunneling injection quantum dot lasers JIA Guo-zhi YAO Jiang-hong SHU Yong-chun WANG Zhan-guo [1]Key Lab. for Weak-Light Nonlinear Photonics Materials of Education Ministry of China and Key Lab. of Photonics Materials and Technology for Information Science, of Tianjin City, TEDA Applied Physics School, Nankai University, Tianjin 300475, China [2]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China Abstract:       To implement high quality tunneling injection quantum dot lasers,effects of primary factors on performance of the tunneling injection quantum dot lasers were investigated. The considered factors were tunneling probability,tunneling time and carriers thermal escape time from the quantum well. The calculation results show that with increasing of the ground-state energy level in quantum well,the tunneling probability increases and the tunneling time decreases,while the thermal escape time decreases because the ground-state energy levelis shallower. Longitudinal optical phonon-assisted tunneling can be an effective method to solve the problem that both the tunneling time and the thermal escape time decrease simultaneously with the ground-state energy level increasing in quantum well. Hits: 3702 Download times: 228 View Full Text    Download reader