.Silicon light emitting device in CMOS technology[J].Optoelectronics Letters,2007,3(2):85-87 Silicon light emitting device in CMOS technology LIU Hai-jun GU Ming LIU Jin-bin HUANG Bei-ju CHEN Hong-da State Key Lab on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China Abstract:       A novel silicon light emitting device was realized with standard 0.35 μ m 2P4M Mixed Mode/RF CMOS technology. The device functions in a reverse breakdown mode and can be turned on at 8.3 V and operated normally at a wide voltage range of 8.3 V-12.0 V. An output optical power of 13.6 nW was measured at the bias of 10 V and 100 mA, and the emitted light intensity was calculated to be more than 1 mW/cm2. The optical spectrum of the device is in the range of 500-820 nm. Hits: 3537 Download times: 202 View Full Text    Download reader