.Charicteristic of a novel optoelectronic polymer and related device fabrication[J].Optoelectronics Letters,2007,3(2):103-105 Charicteristic of a novel optoelectronic polymer and related device fabrication SUN Jian-yuan HE Zhi-qun HAN Xiao WANG Bin WANG Yong-sheng LIU Ying-liang CAO Shao-kui [1]Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China [2]School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450052, China Abstract:       In this paper a preliminary investigation of a novel optoelectronic polymer, poly (p-phenylene N-4-n-butylphenyl-N,N-bis-4-vinylenephenylamine) (PNB), is reported. A single layer structure of ITO/PNB/Al was prepared via spin-coating of PNB solution as a thin film on the top of an ITO substrate, while aluminum top electrode was vacuum evaporated. Dark currentvoltage characteristics of this device showed a typical rectifying behaviour. Photovoltaic response under a monochromatic illumination at 420 nm was observed, with an open circuit voltage of 0.3 V and fill factor of 0.21. Spectral response and optical absorption were found to be matched well. It was also discovered that the device showed a green electroluminescent emission at a forward bias. Turn-on voltage of the device was about 6 V and light output about 22.6 nW at a forward bias of 10 V. The work demonstrated that the PNB material might possess dual exciton sites resulting in a competition for excitons to be either separated or recombined. Both effects were associated with each other, which limited the photovoltaic or electroluminescence to some degrees. Hits: 3621 Download times: 203 View Full Text    Download reader