.A robust method to measure residual stress in micro-structure[J].Optoelectronics Letters,2007,3(2):126-128 A robust method to measure residual stress in micro-structure KANG Yi-lan(Department of mechanics, Tianjin University, Tianjin 300072, China) ; QIU Wei(Department of mechanics, Tianjin University, Tianjin 300072, China) ; LEI Zhen-kun(Department of Engineering Mechanics, Dalian University of Technology, Dalian 116024, China) ; Abstract:       An experimental investigation on the residual stress in porous silicon micro-structure by means of micro-Raman spectroscopy is presented. It is shown by detecting the Raman peak shifts on the surfaces and cross-sections of electrochemical etched porous silicon samples with different porosities that serious residual stresses distribute complicatedly within the whole porous silicon structure. It is proved that micro-Raman spectroscopy is an effective method for residual stress testing on the micro-structures applied in optoelectronics and microelectronics. Hits: 3511 Download times: 199 View Full Text    Download reader