.Light emitting devices based on Si nanoclusters: the integration with a photonic crystal and electroluminescence properties[J].Optoelectronics Letters,2007,3(5):321-325 Light emitting devices based on Si nanoclusters: the integration with a photonic crystal and electroluminescence properties Giorgia Franzò [1]MATIS CNR-INFM and Dipartimento di Fisica e Astronomia, Universita di Catania, via Santa Sofia 64, 95123 Catania, Italy. [2]CNR-IMM, Sezione di Catania, stradale Primosole 50, 95121 Catania, Italy. [3]STMicroelectronics, MLD R＆D, stradale Primosole 50, 95121 Catania, Italy. Abstract:       We present the properties and potentialities of light emitting devices based on amorphous Si nanoclusters. Amorphous nanostructures may constitute an interesting alternative to Si nanocrystals for the monolithic integration of optical and electrical functions in Si technology. In fact, they exhibit an intense room temperature electroluminescence (EL). The EL properties of these devices have been studied as a function of current and of temperature. Moreover, to improve the extraction efficiency of the light, we have integrated the emitting system with a 2D photonic crystal structure opportunely fabricated by using conventional optical lithography to reduce the total internal reflection of the emitted light. The extraction efficiency in such devices increases by a factor of 4 at a resonance wavelength. Hits: 3508 Download times: 199 View Full Text    Download reader