.Properties of ITO:Zr films deposited by co-sputtering[J].Optoelectronics Letters,2008,4(2):137-139 Properties of ITO:Zr films deposited by co-sputtering ZHANG Bo XU Xiao-feng DONG Xian-ping WU Jian-sheng [1]Key Laboratory of Ministry of Education for High Temperature Materials and Tests, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China [2]College of Science, Donghua University, Shanghai 200051, China Abstract:       ITO:Zr films were deposited on glass substrate by co-sputtering with an ITO target and a Zirconium target.Substrate temperature and oxygen flow rate have important influences on the properties of ITO:Zr films.ITO:Zr films show bettex crystalline strucmfe and lower surface roughhess.Better optical-electrical properties of the films cam be achieved at low substrate temperature.The certain oxygen flow rates worsen the electrical properties but can enhance the optical properties of ITO:Zr films.The vadation in optical band gap can be explained on the basis of Burstin-Moss effect. Hits: 3772 Download times: 179 View Full Text    Download reader