.Design of violet InGaN light-emitting diode with staggered quantum well structure[J].Optoelectronics Letters,2008,4(6):399-402 Design of violet InGaN light-emitting diode with staggered quantum well structure Abstract:       The staggered InGaN quantum well (QW) structure and the conventional InCraN QW structure for the emission at a particu-lar wavelength of 400 nm are designed and theoretically investigated, including the distribution of the carriers' concentration,the radiative recombination rate, the Shockley-Read-Hall (SRH) recombination rate as well as the output performance andthe internal quantum efficiency. The theoretical result indicates that the staggered QW structure offers significant improve-ment of carriers' concentration in the QW, especially the hole concentration. The output power and the internal quantumefficiency also show 32.6 % and 32.5 % enhancement, respectively, in comparison with that of the conventional InGaNQW structure. The reduction of the electron overflow can be the main factor for the improvement of the optical perfor-mance for novel staggered InGaN QW structure. Hits: 3742 Download times: 191 View Full Text    Download reader