.Influence of strain on hydrogenic impurity states in a GaN/ Al_xGa_(1-x)N quantum dot[J].Optoelectronics Letters,2009,5(2): Influence of strain on hydrogenic impurity states in a GaN/ Al_xGa_(1-x)N quantum dot 张彬  闫祖威 ZHANG Bin(Department of Physics, Inner Mongolia University, Hohhot 010021, China) ;YAN Zu-Wei(Department of Physics, Inner Mongolia University, Hohhot 010021, China;Colleges of Sciences, Inner Mongolia Agricultural University, Hohhot 010018, China) ? Abstract:       Within the effective-mass approximation, we calculated the influence of sawn on the binding energy of a hydrogenic donor impurity by a variational approach in a cylindrical wurtzite GaN/AlxGa1-xN strained quantum dot, including the strong built-in electric field effect due to the spontaneous and piezoelectric polarization. The results show that the binding energy of impurity decreases when the strain is considered. Then the built-in electric field becomes bigger with the Al content increasing and the binding energy of hydrogenic donor impurity decreases when the Al content is increasing. For dot height L < 2 nm, the change of the binding energy is very smafl with the Al content variety. Hits: 3561 Download times: 199 View Full Text    Download reader