.Influence of strain on hydrogenic impurity states in a GaN/AlxGa1?xN quantum dot[J].Optoelectronics Letters,2009,5(2):85-88 Influence of strain on hydrogenic impurity states in a GaN/AlxGa1?xN quantum dot Abstract:       Within the effective-mass approximation, we calculated the influence of strain on the binding energy of a hydrogenic donor impurity by a variational approach in a cylindrical wurtzite GaN/Al x Ga1−x N strained quantum dot, including the strong builtin electric field effect due to the spontaneous and piezoelectric polarization. The results show that the binding energy of impurity decreases when the strain is considered. Then the built-in electric field becomes bigger with the Al content increasing and the binding energy of hydrogenic donor impurity decreases when the Al content is increasing. For dot height L < 2 nm, the change of the binding energy is very small with the Al content variety. This work has been supported by the National Natural Science Foundation of China (No. 10564003) and the Key Project of the Science and Technology Research of the Educational Ministry of China (No. 208025) Hits: 3690 Download times: 197 View Full Text    Download reader