.Effects of modulation frequency on the structure and electrical characteristics of μc-Si:H films prepared by pulsed VHF-PECVD[J].Optoelectronics Letters,2009,5(3):212-215
Effects of modulation frequency on the structure and electrical characteristics of μc-Si:H films prepared by pulsed VHF-PECVD
王世锋  张晓丹  赵颖  魏长春  许盛之  孙建  耿新华
Institute of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China ?
Abstract:
      Modulation frequency and pulse duty cycle are two key parameters of pulsed VHF-PECVD technology. An experimental study on the microcrystalline silicon materials prepared by pulsed VHF-PECVD technology in high deposition rate is presented. And combining the diagnosis of plasma process with optical emission spectroscopy (OES), the dependence of microstructure and electrical properties of thin films on the pulse modulation frequency is discussed in detail.
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