.Influence of temperature on Auger recombination lifetime in In1?xGaxAs materials[J].Optoelectronics Letters,2010,6(1):31-33 Influence of temperature on Auger recombination lifetime in In1?xGaxAs materials 常玉春 State;Laboratory;Integrated;Optoelectronics;College;Electronic;Science;Engineering;Jilin;University; Abstract:       The influence of temperature and Ga composition on Auger recombination lifetime in n-type and p-type In1-xGaxAs materials is investigated through the simulation, assuming the concentrations of electrons and holes are 1017 cm-3 and 1018 cm-3, respectively. The results show that the temperature has little influence on Auger recombination lifetime of In1-xGaxAs materials at x<0.3. However, it has a great impact when x>0.3 and the effect is more obvious at a lower temperature. Moreover, Auger recombination life... Hits: 3757 Download times: 242 View Full Text    Download reader