| Min Chen,Jun-sheng Yu,Hui Lin,Xia Lei,Wen Wen.Phosphorescent white organic light-emitting devices with color stability and low efficiency decay by using wide band-gap interlayer[J].Optoelectronics Letters,2013,9(1):25-29 |
| Phosphorescent white organic light-emitting devices with color stability and low efficiency decay by using wide band-gap interlayer |
| Author Name | Affiliation | E-mail | | Min Chen | State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, 610054, China | | | Jun-sheng Yu | State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, 610054, China | jsyu@uestc.edu.cn | | Hui Lin | State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, 610054, China | | | Xia Lei | State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, 610054, China | | | Wen Wen | State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, 610054, China | |
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| Abstract: |
| High-performance phosphorescent white organic light-emitting devices (PhWOLEDs) with color stability and low efficiency decay are demonstrated by inserting wide band-gap materials between emitting layers. The two devices with N,N′-dicarbazolyl-3,5-benzene (mCP) and p-bis(triphenylsilyl)benzene (UGH2) as the interlayer exhibit both slight Commission Internationale del’Eclairage (CIE) coordinates variations of (± 0.010, ± 0.005) and (± 0.013, ± 0.006) in a wide voltage range, and low decay in current efficiency which shifts from the peak value 35.4 cd·A?1 and 27.4 cd·A?1 to 28.8 cd·A?1 and 23.5 cd·A?1 at 40000 cd·m?2, respectively. The improvements are attributed to the charge carriers balance and the elimination of energy transfer loss by confining the carrier accumulation at the exciton formation interface through the interlayer. |
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