Li-ping Sun,Shuang-gen Zhang,Zhe Wang,Jia-chun Deng,Jiang Lü.A new method to characterize the metallic-oxide films for grayscale lithography[J].Optoelectronics Letters,2013,9(1):34-37
A new method to characterize the metallic-oxide films for grayscale lithography
Author NameAffiliationE-mail
Li-ping Sun School of Science, Tianjin University of Technology, Tianjin, 300384, China lipingsunnk@163.com 
Shuang-gen Zhang Tianjin Key Laboratory of Film Electronic and Communication Device, Engineering Research Center of Communication Devices, Ministry of Education, Tianjin University of Technology, Tianjin, 300384, China  
Zhe Wang School of Science, Tianjin University of Technology, Tianjin, 300384, China  
Jia-chun Deng School of Science, Tianjin University of Technology, Tianjin, 300384, China  
Jiang Lü School of Science, Tianjin University of Technology, Tianjin, 300384, China  
Abstract:
      In order to characterize the metallic-oxide grayscale films fabricated by laser direct writing (LDW) in indium film, a new method with micro-Raman spectroscopy and atomic force microscope (AFM) is proposed. Raman spectra exhibit the characteristic band of In2O3 centered at 490 cm?1, in which the intensities increase with the decreasing optical density of the In-In2O3 grayscale films. The mapping information of Raman spectra shows that the signal intensities of the film in the same grayscale area are uniform. Combining with the information of In-In2O3 grayscale film from AFM, the quantitative relationship between the concentration of In2O3 and the Raman signal intensity is shown. Compared with the conventional methods, the resolution of micro-Raman scattering method is appropriate, and the scanning speed is proper to analyze the structure of metallic-oxide grayscale films.
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